Experimental Evidence of the Fast and Slow Charge Trapping/Detrapping Processes in High- k Dielectrics Subjected to PBTI Stress
2008; Institute of Electrical and Electronics Engineers; Volume: 29; Issue: 2 Linguagem: Inglês
10.1109/led.2007.914088
ISSN1558-0563
AutoresDawei Heh, Chadwin D. Young, G. Bersuker,
Tópico(s)Integrated Circuits and Semiconductor Failure Analysis
ResumoA single-pulse technique, with a wide range of pulse times, has been applied to study positive bias temperature instability in high-k nMOSFETs. It is shown that the charging phenomenon includes both fast and slow electron trapping processes with rather well-defined characteristic times, which differ by six orders of magnitude. On the other hand, the poststress charge relaxation cannot be described by a simple detrapping process, which makes identifying the dominant detrapping mechanism complicated.
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