Simulation of elevated temperature aluminum metallization using SIMBAD
1992; Institute of Electrical and Electronics Engineers; Volume: 39; Issue: 7 Linguagem: Inglês
10.1109/16.141224
ISSN1557-9646
AutoresS. K. Dew, T. Smy, Michael J. Brett,
Tópico(s)Semiconductor materials and devices
ResumoA ballistic deposition model, SIMBAD, has been extended to simulate physical vapor deposition onto substrates at elevated temperatures. The model has been expanded to account for the effect of film curvature on surface diffusion. The effects on via coverage and filling have been simulated for aluminum films, and complete planarization of a 1:1 aspect ratio via is predicted for a temperature of 550 degrees C. Via aspect ratio and sidewall taper can also strongly affect coverage and filling. Biased sputtering has also been incorporated into the model and shows that a primary effect is a substantial reduction in the temperature required to achieve full planarization. However, void formation and substrate damage are problems predicted to occur under some bias sputter conditions. >
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