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Electrophoretic displays driven by all‐oxide thin‐film transistor backplanes fabricated using a solution process (Phys. Status Solidi A 10∕2015)

2015; Wiley; Volume: 212; Issue: 10 Linguagem: Inglês

10.1002/pssa.201570466

1862-6319

Satoshi Inoue, Phan Trong Tue, Tomoko Hori, Hiroaki Kōyama, Tatsuya Shimoda,

Modular Robots and Swarm Intelligence

physica status solidi (a)Volume 212, Issue 10 Back CoverFree Access Electrophoretic displays driven by all-oxide thin-film transistor backplanes fabricated using a solution process (Phys. Status Solidi A 10∕2015) Satoshi Inoue, Corresponding Author Satoshi Inoue Green Device Research Center, Japan Advanced Institute of Science and Technology, 2-13 Asahidai, Nomi, Ishikawa 923-1211, JapanSearch for more papers by this authorTue Trong Phan, Tue Trong Phan Green Device Research Center, Japan Advanced Institute of Science and Technology, 2-13 Asahidai, Nomi, Ishikawa 923-1211, JapanSearch for more papers by this authorTomoko Hori, Tomoko Hori Green Device Research Center, Japan Advanced Institute of Science and Technology, 2-13 Asahidai, Nomi, Ishikawa 923-1211, JapanSearch for more papers by this authorHiroaki Koyama, Hiroaki Koyama Green Device Research Center, Japan Advanced Institute of Science and Technology, 2-13 Asahidai, Nomi, Ishikawa 923-1211, JapanSearch for more papers by this authorTatsuya Shimoda, Tatsuya Shimoda Green Device Research Center, Japan Advanced Institute of Science and Technology, 2-13 Asahidai, Nomi, Ishikawa 923-1211, JapanSearch for more papers by this author Satoshi Inoue, Corresponding Author Satoshi Inoue Green Device Research Center, Japan Advanced Institute of Science and Technology, 2-13 Asahidai, Nomi, Ishikawa 923-1211, JapanSearch for more papers by this authorTue Trong Phan, Tue Trong Phan Green Device Research Center, Japan Advanced Institute of Science and Technology, 2-13 Asahidai, Nomi, Ishikawa 923-1211, JapanSearch for more papers by this authorTomoko Hori, Tomoko Hori Green Device Research Center, Japan Advanced Institute of Science and Technology, 2-13 Asahidai, Nomi, Ishikawa 923-1211, JapanSearch for more papers by this authorHiroaki Koyama, Hiroaki Koyama Green Device Research Center, Japan Advanced Institute of Science and Technology, 2-13 Asahidai, Nomi, Ishikawa 923-1211, JapanSearch for more papers by this authorTatsuya Shimoda, Tatsuya Shimoda Green Device Research Center, Japan Advanced Institute of Science and Technology, 2-13 Asahidai, Nomi, Ishikawa 923-1211, JapanSearch for more papers by this author First published: 13 October 2015 https://doi.org/10.1002/pssa.201570466AboutPDF ToolsRequest permissionExport citationAdd to favoritesTrack citation ShareShare Give accessShare full text accessShare full-text accessPlease review our Terms and Conditions of Use and check box below to share full-text version of article.I have read and accept the Wiley Online Library Terms and Conditions of UseShareable LinkUse the link below to share a full-text version of this article with your friends and colleagues. Learn more.Copy URL Share a linkShare onEmailFacebookTwitterLinkedInRedditWechat Graphical Abstract Amorphous oxide thin-film transistors (TFTs) have attracted considerable attention for next-generation displays. For largescale displays, a sophisticated solution process to replace the current vacuum deposition methods is strongly desired. However, most solution processes developed to date have only focused on the channel layer. Satoshi Inoue et al. (pp. 2133–2140) introduce all-solution-processed TFT active matrix backplanes in which all layers were prepared from precursor solutions. The gate lines, gate insulator, and channel layer comprised RuO2, La–Zr–O, and Zr–In–Zn–O films. A polysilazanebased SiO2 film was used for the channel stopper layer. The source-line and drain electrodes had a double-layer structure comprising indium–tin oxide and RuO2 films. Silsesquioxanebased SiO2 and RuO2 films were used for the passivation layer and pixel electrodes, respectively. These TFTs exhibited a field effect mobility of 2.68 cm2V-1s-1, a sub-threshold swing of 1.09 V/decade, a threshold voltage of 3.06 V, and an on/off ratio of 105. Active-matrix electrophoretic displays (EPDs) with a resolution of 101.6 ppi were successfully fabricated using the all-solution-processed TFTs. Bi-stable black/white images were confirmed in these TFT–EPDs for the first time. Volume212, Issue10October 2015 RelatedInformation