High electron mobility in nickel bis(dithiolene) complexes
2007; Royal Society of Chemistry; Volume: 17; Issue: 25 Linguagem: Inglês
10.1039/b701036b
ISSN1364-5501
AutoresJian‐Yang Cho, Benoît Domercq, Simon C. Jones, Junsheng Yu, Xiaohong Zhang, Zesheng An, Maximilienne Bishop, Stephen Barlow, Seth R. Marder, Bernard Kippelen,
Tópico(s)Perovskite Materials and Applications
ResumoThe charge-carrier mobilities for three Ni bis(dithiolene) complexes have been determined using the steady-state space-charge limited current technique. A high mobility of 2.8 cm2 V–1 s–1 was observed for one compound, which exhibits a π-stacked columnar structure, in an annealed unsymmetrical melt-processed device. Energy-level considerations and field-effect transistor measurements suggest that this value represents an electron mobility. However, saturation mobilities measured for this compound in spin-coated field-effect transistors were found to be over two orders of magnitude lower than the space-charge limited current values. X-Ray diffraction shows a difference in morphology between thick melt-processed and thin spin-coated films and, therefore, a significant change in intermolecular packing between the device types may explain the discrepancy in mobilities obtained using the two techniques.
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