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High breakdown characteristic δ-doped InGaP/InGaAs/AlGaAs tunneling real-space transfer HEMT

2002; Institute of Electrical and Electronics Engineers; Volume: 49; Issue: 2 Linguagem: Inglês

10.1109/16.981210

1557-9646

Yen‐Wei Chen, Wei-Chou Hsu, Her-Ming Shieh, Yeong-Jia Chen, Yu-Shyan Lin, Yih-Juan Li, Tzong-Bin Wang,

Advancements in Semiconductor Devices and Circuit Design

A novel /spl delta/-doped InGaP/InGaAs/AlGaAs tunneling real-space transfer high-electron mobility transistor (TRST-HEMT) has been successfully fabricated by low-pressure metal organic chemical vapor deposition (LP-MOCVD). Three-terminal N-shaped negative differential resistance (NDR) phenomenon due to the hot electrons real-space transfer (RST) at high electric field is observed. Two-terminal gate-to-drain breakdown voltage is more than 40 V with a leakage current as low as 0.27 mA/mm. High three-terminal on-state breakdown voltage as high as 19.2 V and broad plateau of current valley as high as 15 V are achieved. These characteristics are attributed to the use of high Schottky barrier height, high bandgap of InGaP Schottky layer, /spl delta/-doping, and GaAs subspacer layers. The measured maximum peak-to-valley ratio (PVR) value is 2.7.