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Electrical and optical properties of as-deposited V2O5 –TeO2 amorphous films and their annealing effect

2003; Wiley; Volume: 196; Issue: 2 Linguagem: Inglês

10.1002/pssa.200305949

1521-396X

Manisha Pal, K. Hirota, H. Sakata,

Catalysis and Oxidation Reactions

physica status solidi (a)Volume 196, Issue 2 p. 396-404 Original Paper Electrical and optical properties of as-deposited V2O5 –TeO2 amorphous films and their annealing effect Manisha Pal, Manisha Pal Department of Applied Chemistry, Tokai University, 1117, Kitakaname, Hiratsuka, Kanagawa 259-1292, Japan Present address: Heritage Institute of Technology, Chowbaga Road, Anandapur, Kolkata-700107, India.Search for more papers by this authorK. Hirota, K. Hirota Department of Chemistry, Tokai University, 1117, Kitakaname, Hiratsuka, Kanagawa 259-1292, JapanSearch for more papers by this authorH. Sakata, H. Sakata skt@keyaki.cc.u-tokai.ac.jp Search for more papers by this author Manisha Pal, Manisha Pal Department of Applied Chemistry, Tokai University, 1117, Kitakaname, Hiratsuka, Kanagawa 259-1292, Japan Present address: Heritage Institute of Technology, Chowbaga Road, Anandapur, Kolkata-700107, India.Search for more papers by this authorK. Hirota, K. Hirota Department of Chemistry, Tokai University, 1117, Kitakaname, Hiratsuka, Kanagawa 259-1292, JapanSearch for more papers by this authorH. Sakata, H. Sakata skt@keyaki.cc.u-tokai.ac.jp Search for more papers by this author First published: 25 March 2003 https://doi.org/10.1002/pssa.200305949Citations: 11AboutPDF ToolsRequest permissionExport citationAdd to favoritesTrack citation ShareShare Give accessShare full text accessShare full-text accessPlease review our Terms and Conditions of Use and check box below to share full-text version of article.I have read and accept the Wiley Online Library Terms and Conditions of UseShareable LinkUse the link below to share a full-text version of this article with your friends and colleagues. Learn more.Copy URL Share a linkShare onFacebookTwitterLinked InRedditWechat Abstract DC electrical conductivity of vanadium–tellurite films both as-deposited by vacuum deposition and annealed at 773 K for 3 h after deposition are investigated in the temperature range of 323–473 K. All as-deposited films (250–350 nm thickness) show an amorphous structure; the annealed films show some crystalline peaks of TeO2. The conductivity of the as-deposited films at 373 K varies from 1.07 × 10–7 to 3.73 × 10–15 Scm–1. With annealing the conductivity increases by a factor of 10 to 103 due to the presence of some nanocrystals of TeO2 and also increases with an increase of the V2O5 content. The temperature dependence of the conductivity of both as-deposited and annealed films obeys a non-adiabatic small polaron hopping conduction mechanism. Seebeck coefficient measurements indicate all the films to be n-type semiconductors. From absorption edge analysis it is revealed that the optical band gap energy for the films is 2.96 eV and 3.11 eV for as-deposited films. Urbach tail analysis gives the width of localized states as 0.272 eV and 0.392 eV for two as-deposited films. Citing Literature Volume196, Issue2April 2003Pages 396-404 RelatedInformation