Cu 2 Sn 1- x Ge x S 3 ( x = 0.17) Thin-Film Solar Cells with High Conversion Efficiency of 6.0%
2013; Institute of Physics; Volume: 6; Issue: 4 Linguagem: Inglês
10.7567/apex.6.045501
ISSN1882-0786
AutoresMitsutaro Umehara, Yasuhiko Takeda, Tomoyoshi Motohiro, Takenobu Sakai, Hiroki Awano, Ryosuke Maekawa,
Tópico(s)Copper-based nanomaterials and applications
ResumoWe have fabricated Cu2Sn1-xGexS3 thin-film solar cells by cosputtering deposition of Cu and Sn followed by sulfurization in S and GeS2 vapors. The conversion efficiency was significantly improved to be as high as 6.0% compared with the values of Cu2SnS3 solar cells similarly fabricated. Scanning electron microscopy observation revealed that alloying with Ge accelerated the grain growth during the sulfurization process, contributing to the improvement in the conversion efficiency. The bandgap energy of Cu2Sn0.83Ge0.17S3 was about 1.0 eV, which is suitable for bottom cells used in double-junction solar cells.
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