Simulation Study of Dominant Statistical Variability Sources in 32-nm High- $\kappa$/Metal Gate CMOS
2012; Institute of Electrical and Electronics Engineers; Volume: 33; Issue: 5 Linguagem: Inglês
10.1109/led.2012.2188268
ISSN1558-0563
AutoresXingsheng Wang, Gareth Roy, O. Saxod, A. Bajolet, A. Juge, Asen Asenov,
Tópico(s)Advancements in Photolithography Techniques
ResumoComprehensive 3-D simulations have been carried out and compared with experimental data highlighting the dominant sources of statistical variability in 32-nm high-κ/metal gate MOSFET technology. The statistical variability sources include random discrete dopants, line edge roughness, and metal gate granularity. Their relative importance is highlighted in the numerical simulations. Excellent agreement is achieved between the simulated and measured standard deviation of the threshold voltage.
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