Portal de Periódicos da CAPES

Low-threshold 1.57-μm VC-SEL's using strain-compensated quantum wells and oxide/metal backmirror

1995; Institute of Electrical and Electronics Engineers; Volume: 7; Issue: 5 Linguagem: Inglês

10.1109/68.384504

1941-0174

C.L. Chua, Z.H. Zhu, Yu‐Hwa Lo, R. Bhat, Minghui Hong,

Semiconductor Quantum Structures and Devices

We present an electrically-pumped long wavelength vertical cavity surface-emitting laser (VC-SEL) using strain-compensated multiple quantum well gain medium and an oxide/metal backmirror. Design flexibilities such as using oxide/metal mirrors are possible because of the exceedingly high optical gain provided by strain-compensated multiple quantum wells. The gain medium is bonded to various substrates, including InP and Si, prior to device processing. This substrate transfer process facilitates heat sinking, and can be useful in the integration of VC-SEL's with other devices. The device operates at a single wavelength of 1.57 μm, and has a minimum threshold of 12 mA at room temperature under pulse pumping.