Neutral Bound Excitons in a Low Magnetic Field
1984; Wiley; Volume: 126; Issue: 1 Linguagem: Inglês
10.1002/pssb.2221260139
ISSN1521-3951
AutoresF. Dujardin, B. Stébé, G. Munschy,
Tópico(s)Quantum and electron transport phenomena
ResumoAbstract The diamagnetic shift of an exciton bound to a neutral donor or acceptor shallow impurity in direct gap semiconductors is studied using the previously obtained Page and Fraser type wave function. The results are compared with the experimental observations in InP for the exciton‐neutral donor complex and in GaAs and ZnTe for the exciton‐neutral acceptor complex. In all cases qualitative agreement is found while for InP a very good agreement is obtained if an isotropic experimental effective hole mass is used.
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