Artigo Acesso aberto

High-Power Quantum-Dot Superluminescent Diodes With p-Doped Active Region

2006; Institute of Electrical and Electronics Engineers; Volume: 18; Issue: 18 Linguagem: Inglês

10.1109/lpt.2006.882303

ISSN

1941-0174

Autores

Mattia Rossetti, Lianhe Li, Andrea Fiore, L. Occhi, C Velez, S. Mikhrin, A. R. Kovsh,

Tópico(s)

Optical Coherence Tomography Applications

Resumo

We demonstrate the use of p-doping in the active region of quantum-dot superluminescent diodes.Modal gain measurements and light output-current characteristics prove that p-doping is beneficial for achieving higher gain, higher output power, and better temperature stability.

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