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Ge/SiGe quantum confined Stark effect electro-absorption modulation with low voltage swing at λ = 1550 nm

2014; Optica Publishing Group; Volume: 22; Issue: 16 Linguagem: Inglês

10.1364/oe.22.019284

1094-4087

Derek C. S. Dumas, Kevin Gallacher, Stephen Rhead, M. Myronov, D. R. Leadley, Douglas J. Paul,

Silicon Nanostructures and Photoluminescence

Low-voltage swing (≤1.0 V) high-contrast ratio (6 dB) electro-absorption modulation covering 1460 to 1560 nm wavelength has been demonstrated using Ge/SiGe quantum confined Stark effect (QCSE) diodes grown on a silicon substrate. The heterolayers for the devices were designed using an 8-band k.p Poisson-Schrödinger solver which demonstrated excellent agreement with the experimental results. Modelling and experimental results demonstrate that by changing the quantum well width of the device, low power Ge/SiGe QCSE modulators can be designed to cover the S- and C-telecommunications bands.