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Ambipolar MoTe 2 Transistors and Their Applications in Logic Circuits

2014; Volume: 26; Issue: 20 Linguagem: Inglês

10.1002/adma.201305845

1521-4095

Yen‐Fu Lin, Yong Xu, Sheng‐Tsung Wang, Songlin Li, Mahito Yamamoto, A. Aparecido-Ferreira, Wenwu Li, Huabin Sun, Shu Nakaharai, Wen‐Bin Jian, Keiji Ueno, Kazuhito Tsukagoshi,

Graphene research and applications

We report ambipolar charge transport in α-molybdenum ditelluride (MoTe2) flakes, whereby the temperature dependence of the electrical characteristics was systematically analyzed. The ambipolarity of the charge transport originated from the formation of Schottky barriers at the metal/MoTe2 contacts. The Schottky barrier heights as well as the current on/off ratio could be modified by modulating the electrostatic fields of the back-gate voltage (V bg) and drain-source voltage (V ds). Using these ambipolar MoTe2 transistors we fabricated complementary inverters and amplifiers, demonstrating their feasibility for future digital and analog circuit applications.