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Thermal measurements of active semiconductor micro-structures acquired through the substrate using near IR thermoreflectance

2004; Volume: 35; Issue: 10 Linguagem: Inglês

10.1016/j.mejo.2004.06.009

0026-2692

James Christofferson, Ali Shakouri,

Silicon and Solar Cell Technologies

Modern, high-density integrated circuits (IC) typically use a flip chip bonding technique to increase performance on a greater number of interconnects. In doing so, the active devices of the IC are hidden under the exposed substrate, which precludes the use of typical surface thermal characterization techniques. A near infrared thermoreflectance method is described such that the temperature of active semiconductor devices can be measured through the substrate. Experimental results were obtained through a 200 μm thick silicon substrate. Temperature resolution of 0.1 K and spatial resolution of 5 μm has been achieved. The Fabry–Perot effect, due to multiple reflections between the device and the back of the substrate, has been experimentally and theoretically analyzed. Techniques to enhance the spatial resolution will be discussed.