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AlGaN/GaN HEMT With 300-GHz $f_{\max}$

2010; Institute of Electrical and Electronics Engineers; Volume: 31; Issue: 3 Linguagem: Inglês

10.1109/led.2009.2038935

1558-0563

J.W. Chung, W. E. Hoke, E.M. Chumbes, Tomás Palacios,

Radio Frequency Integrated Circuit Design

We report on a gate-recessed AlGaN/GaN high-electron mobility transistor (HEMT) on a SiC substrate with a record power-gain cutoff frequency (f max ). To achieve this high f max , we combined a low-damage gate-recess technology, scaled device geometry, and recessed source/drain ohmic contacts to simultaneously enable minimum short-channel effects (i.e., high output resistance R ds ) and very low parasitic resistances. A 60-nm-gate-length HEMT with recessed AlGaN barrier exhibited excellent R ds of 95.7 ¿·mm, R on of 1.1 ~ 1.2 ¿ · mm, and f max of 300 GHz, with a breakdown voltage of ~ 20 V. To the authors' knowledge, the obtained f max is the highest reported to date for any nitride transistor. The accuracy of the f max value is verified by small signal modeling based on carefully extracted S-parameters.