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Picosecond intersubband dynamics in p-Si/SiGe quantum-well emitter structures

2002; American Institute of Physics; Volume: 80; Issue: 8 Linguagem: Inglês

10.1063/1.1452794

1520-8842

P. Murzyn, C. R. Pidgeon, J.‐P. R. Wells, I.V. Bradley, Z. Ikonić, R. W. Kelsall, P. Harrison, Stephen A. Lynch, Douglas J. Paul, Danilo Arnone, David J. Robbins, David J. Norris, A. G. Cullis,

Advancements in Semiconductor Devices and Circuit Design

We report time-resolved (ps) studies of the dynamics of intersubband transitions in p-Si/SiGe multiquantum-well structures in the far-infrared (FIR) regime, ℏω<ℏωLO, utilizing the Dutch free electron laser, (entitled FELIX—free electron laser for infrared radiation). The calculated scattering rates for optic and acoustic phonon, and alloy scattering have been included in a rate equation model of the transient FIR intersubband absorption, and show excellent agreement with our degenerate pump-probe spectroscopy measurements where, after an initial rise time determined by the resolution of our measurement, we determine a decay time of ∼10 ps. This is found to be approximately constant in the temperature range from 4 to 100 K, in good agreement with the predictions of alloy scattering in the Si0.7Ge0.3 wells.