CHARACTERISTICS OF BISMUTH-BASED THIN FILMS DEPOSITED DIRECTLY ON POLYMER SUBSTRATES FOR EMBEDDED CAPACITOR APPLICATION
2007; Taylor & Francis; Volume: 95; Issue: 1 Linguagem: Inglês
10.1080/10584580701759262
ISSN1607-8489
AutoresJun‐Ku Ahn, Hae‐Won Kim, Kyung-Chan Ahn, Soon‐Gil Yoon, SeungHyun Son, Hyung-Mi Jung, Jin-Suck Moon, Hyun-Joo Jin, Seung‐Eun Lee, Jeong‐Won Lee, Yeoul-Kyo Chung, Yong-Soo Oh,
Tópico(s)Semiconductor materials and devices
ResumoABSTRACT B2Mg2/3Nb4/3O7 (BMN) thin films were deposited at low temperature (< 200°C) on Copper Clad Laminates (CCL) with various Ar/O2 flow ratios and film thicknesses by sputtering system. 200 nm-thick BMN thin films were deposited at Ar/O2 = 10: 10 had rms roughness of 54.3 ÅA, capacitance density of 155 nF/cm2 at 100 kHz, dissipation factor of 0.017 and leakage current density of ∼10− 5 at 3 V. Surface roughness of the BMN thin films increased a little with increasing the film thickness. However leakage current density decreased and the dielectric constant of that was maintained at 40.
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