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Optimum Device Parameters and Scalability of Variable Threshold Voltage Complementary MOS (VTCMOS)

2001; Institute of Physics; Volume: 40; Issue: 4S Linguagem: Inglês

10.1143/jjap.40.2854

1347-4065

Toshiro Hiramoto, Makoto Takamiya Makoto Takamiya, Hiroshi Koura, Takashi Inukai, H. Gomyo, Hiroshi Kawaguchi, Takayasu Sakurai Takayasu Sakurai,

Low-power high-performance VLSI design

The optimum device parameters of variable threshold voltage complementary metal oxide semiconductor (VTCMOS) have been investigated by means of device simulation and its scalability has been discussed. The optimum body effect factor depends on the relationship between the substrate bias and the supply voltage. It is shown that the VTCMOS scheme aiming at extremely low stand-by power will fail as the device size and the supply voltage are scaled. The advantage of VTCMOS will be its high speed, and the VTCMOS will be essential in high-speed circuits operating at a low supply voltage in combination with another low stand-by power scheme such as the insertion of leak cut-off switches.