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Ferroelectricity in Gd-Doped HfO 2 Thin Films

2012; Institute of Physics; Volume: 1; Issue: 6 Linguagem: Inglês

10.1149/2.002301jss

2162-8777

Stefan Mueller, Christoph Adelmann, Aarti Singh, Sven Van Elshocht, Uwe Schroeder, Thomas Mikolajick,

Semiconductor materials and devices

The incorporation of Gd into HfO2 thin films is shown to induce ferroelectricity. A significant influence of electric field cycling on both polarization as well as small-signal capacitance-voltage measurements can be observed. X-ray diffraction measurements are supported by infrared absorption analysis and give further evidence of the previously proposed non-centrosymmetric transition phase of space group Pbc21.