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The (220) lattice spacing of silicon

1995; Institute of Electrical and Electronics Engineers; Volume: 44; Issue: 2 Linguagem: Inglês

10.1109/19.377898

1557-9662

Giuseppe Basile, A. Bergamin, G. Cavagnero, G. Mana, E. Vittone, G. Zosi,

Force Microscopy Techniques and Applications

Further details are given of an experiment based on combined X-ray and optical interferometry to measure the (220) lattice spacing of silicon. A resolution of 5/spl times/10/sup -9/ d/sub 220/ was achieved and the silicon d/sub 220/ was determined to 3/spl times/10/sup -8/ d/sub 220/ accuracy. The measured value is d/sub 220/=(192015.551/spl plusmn/0.005) fm. After correction for the impurity-induced lattice strain, d/sub 220/=(192015.569/spl plusmn/0.006) fm was obtained. >