Portal de Periódicos da CAPES

A new static induction thyristor (SITh) analytical model

1999; Institute of Electrical and Electronics Engineers; Volume: 14; Issue: 5 Linguagem: Inglês

10.1109/63.788483

1941-0107

J. Wang, B.W. Williams,

Magnetic Properties and Applications

In this paper, an analytical static induction thyristor (SITh) model is proposed based on device internal physical operating mechanisms. The nonquasi-static model predicts both device static and dynamic characteristics. The model accounts for effects of the device structure, lifetime, and temperature. Implemented in PSPICE as a subcircuit, model simulation results are compared with numerical simulation and experiment results for various electrical and thermal conditions. The model exhibits accurate results, good convergence, and fast simulation speed.