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Multiple-quantum-well GaInNAs-GaNAs ridge-waveguide laser diodes operating out to 1.4 /spl mu/m

2002; Institute of Electrical and Electronics Engineers; Volume: 14; Issue: 5 Linguagem: Inglês

10.1109/68.998694

1941-0174

W. Ha, Vincent Gambin, Mark A. Wistey, Seth R. Bank, Seongsin Kim, J. S. Harris,

Photonic and Optical Devices

Results from a ridge waveguide laser diode (LD) structure, with three GaInNAs quantum wells (QWs) and GaNAs barriers, are presented. The sample was grown by solid source molecular beam epitaxy with an RF plasma nitrogen source. These devices differ from previously reported GaInNAs QWs LDs that used GaAs as the barrier material. The introduction of nitrogen into the barriers reduces the spectral blue shift caused by post-growth annealing. Long wavelength emission out to 1.405 μm was observed. The devices exhibited threshold current densities as low as 1.5 kA/cm 2 , high differential efficiency of 0.67 W/A, and a maximum output power of 350 mW."