Improvement of the Performance and Stability of Oxide Semiconductor Thin-Film Transistors Using Double-Stacked Active Layers
2012; Institute of Electrical and Electronics Engineers; Volume: 33; Issue: 6 Linguagem: Inglês
10.1109/led.2012.2190036
ISSN1558-0563
Autores Tópico(s)Transition Metal Oxide Nanomaterials
ResumoAn amorphous oxide semiconductor thin-film transistor (TFT) with a 47.7-cm 2 · V -1 · s -1 field-effect mobility (μ FE ) and a 1.57-V threshold voltage (V TH ) was produced using a double-stacked active layer composed of a 5-nm indium-zinc-oxide layer and a 60-nm gallium-indium-zinc-oxide (GIZO) layer. The μ FE is about 2.3 times higher than that of a GIZO TFT, and the V TH is almost same as that of a GIZO TFT. The stability of this TFT with a double-stacked active layer was superior to that of a GIZO TFT.
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