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Resonant-cavity separate absorption, charge and multiplication avalanche photodiodes with high-speed and high gain-bandwidth product

1998; Institute of Electrical and Electronics Engineers; Volume: 10; Issue: 3 Linguagem: Inglês

10.1109/68.661426

1941-0174

Hui Nie, K.A. Anselm, C. Lenox, Peng Yuan, Chang‐Ping Hu, Geoffrey S. Kinsey, B. G. Streetman, Joe C. Campbell,

Advanced Optical Sensing Technologies

Previously, it has been shown that resonant-cavity separate-absorption-and-multiplication (SAM) avalanche photodiodes (APD's) exhibit high-speed and high gain-bandwidth products. In this letter, we describe a resonant-cavity SAM APD with an additional charge layer that provides better control of the electric field profile. These devices have achieved bandwidths as high as 33 GHz in the low-gain regime and a record gain-bandwidth product of 290 GHz. We also describe the correlation between the gain-bandwidth product and the doping level in the charge layer. With width dependent ionization coefficients, the current versus voltage (I-V) and gain-bandwidth simulations agree well with the measured results and indicate that even higher gain-bandwidth should be achievable with an optimized SACM APD structure.