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A novel frequency-multiplication device based on three-terminal ballistic junction

2002; Institute of Electrical and Electronics Engineers; Volume: 23; Issue: 7 Linguagem: Inglês

10.1109/led.2002.1015202

1558-0563

Ivan Shorubalko, H. Q. Xu, Ivan Maximov, Dan‐Eric Nilsson, R. Omling, Lars Samuelson, W. Seifert,

Advancements in Semiconductor Devices and Circuit Design

In this letter, a novel frequency-multiplication device based on a three-terminal ballistic junction is proposed and demonstrated. A 100 nm-size, three-terminal ballistic junction and a one-dimensional (1D), lateral-field-effect transistor with trench gate-channel insulation are fabricated from high-electron-mobility GaInAs/InP quantum-well material as a single device. The devices show frequency doubling and gain at room temperature. The performance of these devices up to room temperature originates from the nature of the device functionality and the fact that the three-terminal device extensions are maintained below the carrier mean-free path. Furthermore, it is expected that the device performance can be extended up to THz-range.