Intersubband electroluminescence in GaAs/AlGaAs quantum cascade structures
1997; Institution of Engineering and Technology; Volume: 33; Issue: 22 Linguagem: Inglês
10.1049/el
ISSN1350-911X
AutoresY.B. Li, J. W. Cockburn, M. S. Skolnick, Martin Birkett, J.P. Duck, R. Grey, G. Hill,
Tópico(s)Semiconductor Lasers and Optical Devices
ResumoThe authors report the first observation of intersubband electroluminescence in GaAs/AlGaAs-based quantum cascade structures. A 100 Å Al0.15Ga0.85As/Al0.4Ga0.6As well is employed to bridge the individual active regions to enhance the overall quantum efficiency, thus greatly simplifying the design and growth of quantum cascade structures.
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