Highly Uniform, Electroforming‐Free, and Self‐Rectifying Resistive Memory in the Pt/Ta 2 O 5 /HfO 2‐x /TiN Structure
2014; Wiley; Volume: 24; Issue: 32 Linguagem: Inglês
10.1002/adfm.201400064
ISSN1616-3028
AutoresJung Ho Yoon, Seul Ji Song, Il‐Hyuk Yoo, Jun Yeong Seok, Kyung Jean Yoon, Dae Eun Kwon, Tae Hyung Park, Cheol Seong Hwang,
Tópico(s)Transition Metal Oxide Nanomaterials
ResumoThe development of a resistance switching (RS) memory cell that contains rectification functionality in itself, highly reproducible RS performance, and electroforming‐free characteristics is an impending task for the development of resistance switching random access memory. In this work, a two‐layered dielectric structure consisting of HfO 2 and Ta 2 O 5 layers, which are in contact with the TiN and Pt electrode, is presented for achieving these tasks simultaneously in one sample configuration. The HfO 2 layer works as the resistance switching layer by trapping or detrapping of electronic carriers, whereas the Ta 2 O 5 layer remains intact during the whole switching cycle, which provides the rectification. With the optimized structure and operation conditions for the given materials, excellent RS uniformity, electroforming‐free, and self‐rectifying functionality could be simultaneously achieved from the Pt/Ta 2 O 5 /HfO 2 /TiN structure.
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