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Light-emitting diode emitting at 650 nm with 200-MHz small-signal modulation bandwidth

2000; Institute of Electrical and Electronics Engineers; Volume: 12; Issue: 7 Linguagem: Inglês

10.1109/68.853500

1941-0174

Mircea Guină, S. Orsila, M. Dumitrescu, M. Saarinen, Pekko Sipilä, Ville Vilokkinen, Brendan Roycroft, Petteri Uusimaa, M. Toivonen, M. Pessa,

Semiconductor Quantum Structures and Devices

State-of-the-art modulation bandwidths are presented for multiquantum well resonant cavity light emitting diodes (RCLED's) emitting at 650 nm. 84-μm size epoxy coated RCLED's have a 1.4-mW (CW) output power and a small signal modulation bandwidth of 200 MHz at 40 mA bias. 150-μm diameter devices yield 3.25-mW and 150-MHz bandwidth at 70-mA bias. An open eye-diagram at 622 Mb/s achieved for the 84-μm device makes it very attractive for SONET OC-12 data communication links.