Characteristics of a grating-external-cavity semiconductor laser containing intracavity prism beam expanders
1992; Institute of Electrical and Electronics Engineers; Volume: 10; Issue: 3 Linguagem: Inglês
10.1109/50.124495
ISSN1558-2213
Autores Tópico(s)Semiconductor Quantum Structures and Devices
ResumoA grating tuned external cavity semiconductor laser incorporating a gradient-index rod lens and a pair of intracavity silicon prism beam expanders was constructed using a configuration aimed at simultaneously achieving the following objectives: the ability to operate at any external cavity longitudinal mode without tuning gaps caused by residual resonances of the laser diode cavity, stable feedback coupling between the diode and external cavities, narrow optical linewidth, and a high degree of external cavity longitudinal sidemode suppression. >
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