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P‐9: Study of the Origin of Major Donor States in Oxide Semiconductor

2014; Wiley; Volume: 45; Issue: 1 Linguagem: Inglês

10.1002/j.2168-0159.2014.tb00253.x

2168-0159

Masashi Oota, Noritaka Ishihara, Motoki Nakashima, Yoichi Kurosawa, Takuya Hirohashi, Masahiro Takahashi, Shunpei Yamazaki, Toshimitsu Obonai, Yasuharu Hosaka, Junichi Koezuka, Yohsuke Kanzaki, Hiroshi Matsukizono, Seiji Kaneko, Takuya Matsuo,

Semiconductor materials and devices

Abstract The investigation of donor states is an important issue for characteristics and reliability of FETs. We succeeded in identifying the origin of donor states of InGaZnO through experiments and calculations. In addition, the number of photomasks is reduced by applying this mechanism.