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Homogenization of CZ Si wafers by Tabula Rasa annealing

2009; Elsevier BV; Volume: 404; Issue: 23-24 Linguagem: Inglês

10.1016/j.physb.2009.08.131

1873-2135

Mojmír Meduňa, Ondřej Caha, J. Kuběna, A. Kuběna, Jiřı́ Buršı́k,

Solidification and crystal growth phenomena

The precipitation of interstitial oxygen in Czochralski grown silicon has been investigated by infrared absorption spectroscopy, chemical etching, transmission electron microscopy and X-ray diffraction after application of homogenization annealing process called Tabula Rasa. The influence of this homogenization step consisting in short time annealing at high temperature has been observed for various temperatures and times. The experimental results involving the interstitial oxygen decay in Si wafers and absorption spectra of SiOx precipitates during precipitation annealing at 1000∘C were compared with other techniques for various Tabula Rasa temperatures. The differences in oxygen precipitation, precipitate morphology and evolution of point defects in samples with and without Tabula Rasa applied is evident from all used experimental techniques. The results qualitatively correlate with prediction of homogenization annealing process based on classical nucleation theory.