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Low-temperature crystallization of sol–gel-derived lead zirconate titanate thin films using 2.45 GHz microwaves

2006; Elsevier BV; Volume: 515; Issue: 5 Linguagem: Inglês

10.1016/j.tsf.2006.08.044

1879-2731

Ankam Bhaskar, Tsun‐Hsu Chang, Horng-Yi Chang, S. Y. Cheng,

Advanced ceramic materials synthesis

Lead zirconate titanate (PZT) thin films of thickness 420 nm were deposited on Pt/Ti/SiO2/Si substrate using a spin coating sol–gel precursor solution, and then annealed using 2.45 GHz microwaves at a temperature of 450 °C for 30 min. The film has a high perovskite content and high crystallinity with a full width at half maximum of 0.35°. The surface roughness of the PZT thin film was 1.63 nm. Well-saturated ferroelectric properties were obtained with a remanent polarization of 46.86 μC/cm2 and coercive field of 86.25 kV/cm. The film also exhibited excellent dielectric properties with a dielectric constant of 1140 and a dissipation factor of 0.03. These properties are superior to those obtained by conventional annealing at a temperature of 700 °C for 30 min.