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Demonstration of ultraviolet separate absorption and multiplication 4H-SiC avalanche photodiodes

2005; Institute of Electrical and Electronics Engineers; Volume: 18; Issue: 1 Linguagem: Inglês

10.1109/lpt.2005.860384

1941-0174

Xiangyi Guo, L.B. Rowland, Greg Dunne, Jody Fronheiser, Peter M. Sandvik, A.L. Beck, Joe C. Campbell,

Integrated Circuits and Semiconductor Failure Analysis

We report ultraviolet separate absorption and multiplication 4H-SiC avalanche photodiodes. An external quantum efficiency of 83% (187 mA/W) at 278 nm, corresponding to unity gain after reach-through was achieved. A gain higher than 1000 was demonstrated without edge breakdown.