Voltar
Artigo Revisado por pares
BIBTEX RIS

Construction and characterization of a 117 cm/sup 2/ silicon pixel detector

1995; Institute of Electrical and Electronics Engineers; Volume: 42; Issue: 4 Linguagem: Inglês

10.1109/23.467810

ISSN

1558-1578

Autores

E.H.M. Heijne, F. Antinori, D. Barberis, H. Beker, W. Beusch, P. Burger, M. Campbell, Eugenio Cantatore, M.G. Catanesi, E. Chesi, G. Darbo, S. D’Auria, C. Da Vià, D. Di Bari, S. Di Liberto, D. Elia, T. Gys, H. Helstrup, X. He, A. Jachołkowski, P. Jarron, W. Klempt, I. Králik, F. Krummenacher, J. Lasalle, R. Leitner, F. Lemeilleur, V. Lenti, M. Lokajı́ček, L. López, M. Lupták, G. Maggi, P. Martinengo, F. Meddi, A. Menetrey, P. Middelkamp, M. Morando, A. Munns, P. Musico, François Pellegrini, S. Pospı́s̆il, E. Quercigh, J. Řídký, E. Rossi, K. Šafařı́k, S. Saladino, G. Segato, S. Simone, W. Snoeys, G. Stefanini, V. Vrba,

Tópico(s)

CCD and CMOS Imaging Sensors

Resumo

A silicon pixel detector, developed in RD19, and consisting of 4 planes, /spl sim/30 cm/sup 2/ each, is operating for the first time in the lead ion experiment WA97 at CERN. The 288 CMOS readout chips are bump-bonded to 48 Si detector matrices, assembled in 8 identical arrays. The total number of pixel cells is nearly 300000 and each cell, 75 /spl mu/m/spl times/500 /spl mu/m, contains a complete signal processing chain. Overall dead area is less than 3%. >

Referência(s)