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Manganese Doping of Monolayer MoS 2 : The Substrate Is Critical

2015; American Chemical Society; Volume: 15; Issue: 10 Linguagem: Inglês

10.1021/acs.nanolett.5b02315

1530-6992

Kehao Zhang, Simin Feng, Junjie Wang, Angelica Azcatl, Ning Lü, Rafik Addou, Nan Wang, Chanjing Zhou, Jordan O. Lerach, Vincent Bojan, Moon J. Kim, Long‐Qing Chen, Robert M. Wallace, Mauricio Terrones, Jun Zhu, Joshua A. Robinson,

Perovskite Materials and Applications

Substitutional doping of transition metal dichalcogenides (TMDs) may provide routes to achieving tunable p-n junctions, bandgaps, chemical sensitivity, and magnetism in these materials. In this study, we demonstrate in situ doping of monolayer molybdenum disulfide (MoS2) with manganese (Mn) via vapor phase deposition techniques. Successful incorporation of Mn in MoS2 leads to modifications of the band structure as evidenced by photoluminescence and X-ray photoelectron spectroscopy, but this is heavily dependent on the choice of substrate. We show that inert substrates (i.e., graphene) permit the incorporation of several percent Mn in MoS2, while substrates with reactive surface terminations (i.e., SiO2 and sapphire) preclude Mn incorporation and merely lead to defective MoS2. The results presented here demonstrate that tailoring the substrate surface could be the most significant factor in substitutional doping of TMDs with non-TMD elements.