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A Global-Shutter CMOS Image Sensor With Readout Speed of 1-Tpixel/s Burst and 780-Mpixel/s Continuous

2012; Institute of Electrical and Electronics Engineers; Volume: 48; Issue: 1 Linguagem: Inglês

10.1109/jssc.2012.2219685

1558-173X

Yasuhisa Tochigi, Katsuhiko Hanzawa, Yuri Kato, Rihito Kuroda, Hideki Mutoh, Ryuta Hirose, Hideki Tominaga, Kenji Takubo, Yasushi Kondo, Shigetoshi Sugawa,

Advanced Memory and Neural Computing

A 400 H ×256 V pixels global-shutter high-speed CMOS image sensor including 128 on-chip memories/pixel has been fabricated in a 0.18-μm 2P4M CMOS with pinned photodiode process. The key technologies of this image sensor are as follows: multiple on-chip memories for each pixel, spatial separation of pixel and on-chip memory regions, multiple pixel output wires for each column, in-pixel noise reduction circuits, in-pixel source-follower current-sources and flexibly selectable on-chip memories. This CMOS image sensor achieves 1 Tpixel/s burst video operation, a full resolution of 10 Mfps with 128 frames and a half resolution of 20 Mfps with 256 frames, and 780 Mpixel/s continuous video operation on the same chip. The power consumption at 1 Tpixel/s was 24 W, while the image sensor operates without active cooling.