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Electronic Structure Modification of Ion Implanted Graphene: The Spectroscopic Signatures of p- and n-Type Doping

2015; American Chemical Society; Volume: 9; Issue: 11 Linguagem: Inglês

10.1021/acsnano.5b05305

1936-086X

Demie Kepaptsoglou, Trevor Hardcastle, Ché R. Seabourne, U. Bangert, Recep Zan, Julian Alexander Amani, H. Hofsäß, Rebecca J. Nicholls, Rik Brydson, A.J. Scott, Quentin M. Ramasse,

Supercapacitor Materials and Fabrication

A combination of scanning transmission electron microscopy, electron energy loss spectroscopy, and ab initio calculations is used to describe the electronic structure modifications incurred by free-standing graphene through two types of single-atom doping. The N K and C K electron energy loss transitions show the presence of π* bonding states, which are highly localized around the N dopant. In contrast, the B K transition of a single B dopant atom shows an unusual broad asymmetric peak which is the result of delocalized π* states away from the B dopant. The asymmetry of the B K toward higher energies is attributed to highly localized σ* antibonding states. These experimental observations are then interpreted as direct fingerprints of the expected p- and n-type behavior of graphene doped in this fashion, through careful comparison with density functional theory calculations.