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A 2-<formula formulatype="inline"><tex Notation="TeX">$\mu{\hbox{m}}$</tex></formula> InGaP/GaAs Class-J Power Amplifier for Multi-Band LTE Achieving 35.8-dB Gain, 40.5% to 55.8% PAE and 28-dBm Linear Output Power

2015; IEEE Microwave Theory and Techniques Society; Volume: 64; Issue: 1 Linguagem: Inglês

10.1109/tmtt.2015.2498150

1557-9670

U. R. Jagadheswaran, Harikrishnan Ramiah, Pui‐In Mak, Rui P. Martins,

GaN-based semiconductor devices and materials

This paper describes the first linear multistage class-J power amplifier (PA) fabricated in a 2- μm InGaP/GaAs HBT process for multi-band long-term evolution (LTE) applications. It includes a three-stage topology composed by a pre-driver, driver, and a class-J main stage, to optimize the output power and power-added efficiency (PAE) over 1.7-2.05 GHz, thus encapsulating the LTE bands 1 to 4, 9 to 10, 33 to 37, and 39. This is achieved through a novel analog pre-distorter linearizer, which features two sub-circuits for AM-AM and AM-PM linearization. The PA prototype meets the standard's adjacent channel leakage ratio at a maximum linear output power of 28 dBm. Tested at 2.05 GHz and for a 16-QAM scheme, the maximum error vector magnitude is 3.38% at a 28-dBm output power, which corresponds to a PAE of 40.5%-55.8% across bands. The input return loss is 15 dB and the maximum power gain is 35.8 dB, while demonstrating an unconditional stable characteristic from dc up to 5 GHz. The die area is 950 μm×900 μm. The performance metrics compare favorably with the state-of-the-art.