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Room Temperature Semiconductor–Metal Transition of MoTe 2 Thin Films Engineered by Strain

2015; American Chemical Society; Volume: 16; Issue: 1 Linguagem: Inglês

10.1021/acs.nanolett.5b03481

1530-6992

Seunghyun Song, Dong Hoon Keum, Suyeon Cho, David Perello, Yunseok Kim, Young Hee Lee,

MXene and MAX Phase Materials

We demonstrate a room temperature semiconductor–metal transition in thin film MoTe2 engineered by strain. Reduction of the 2H-1T′ phase transition temperature of MoTe2 to room temperature was realized by introducing a tensile strain of 0.2%. The observed first-order SM transition improved conductance ∼10 000 times and was made possible by an unusually large temperature-stress coefficient, which results from a large volume change and small latent heat. The demonstrated strain-modulation of the phase transition temperature is expected to be compatible with other TMDs enabling the 2D electronics utilizing polymorphism of TMDs along with the established materials.