Improved carrier injection in GaN-based VCSEL via AlGaN/GaN multiple quantum barrier electron blocking layer
2015; Optica Publishing Group; Volume: 23; Issue: 21 Linguagem: Inglês
10.1364/oe.23.027145
ISSN1094-4087
AutoresDan‐Hua Hsieh, An-Jye Tzou, Tsung Sheng Kao, Fang‐I Lai, Da-Wei Lin, B.C. Lin, Tien‐Chang Lu, Wei‐Chih Lai, C. H. Chen, Hao‐Chung Kuo,
Tópico(s)Semiconductor materials and devices
ResumoIn this report, the improved lasing performance of the III-nitride based vertical-cavity surface-emitting laser (VCSEL) has been demonstrated by replacing the bulk AlGaN electron blocking layer (EBL) in the conventional VCSEL structure with an AlGaN/GaN multiple quantum barrier (MQB) EBL. The output power can be enhanced up to three times from 0.3 mW to 0.9 mW. In addition, the threshold current density of the fabricated device with the MQB-EBL was reduced from 12 kA/cm2 (9.5 mA) to 10.6 kA/cm2 (8.5 mA) compared with the use of the bulk AlGaN EBL. Theoretical calculation results suggest that the improved carrier injection efficiency can be mainly attributed to the partial release of the strain and the effect of quantum interference by using the MQB structure, hence increasing the effective barrier height of the conduction band.
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