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Type-II vertical-external-cavity surface-emitting laser with Watt level output powers at 1.2 μ m

2016; American Institute of Physics; Volume: 108; Issue: 7 Linguagem: Inglês

10.1063/1.4942103

1520-8842

Christoph Möller, Christian Fuchs, Christian Berger, Antje Ruiz Perez, Martín Koch, J. Hader, Jerome V. Moloney, S. W. Koch, W. Stolz,

Photonic and Optical Devices

Semiconductor laser characteristics based on type-II band-aligned quantum well heterostructures for the emission at 1.2 μm are presented. Ten “W”-quantum wells consisting of GaAs/(GaIn)As/Ga(AsSb)/(GaIn)As/GaAs are arranged as resonant periodic gain in a vertical-external-cavity surface-emitting laser. Its structure is analyzed by X-ray diffraction, photoluminescence, and reflectance measurements. The laser's power curves and spectra are investigated. Output powers at Watt level are achieved, with a maximum output power of 4 W. It is confirmed that laser operation only involves the type-II transition. A blue shift of the material gain is observed while the modal gain exhibits a red shift.