Study of the Intrinsic Recombination Velocity at the Junction of Silicon Solar under Frequency Modulation and Irradiation
2015; Scientific Research Publishing; Volume: 03; Issue: 11 Linguagem: Inglês
10.4236/jamp.2015.311177
ISSN2327-4379
AutoresEl Hadji Barka Ndiaye, Gökhan Şahin, Moustapha Dieng, Amary Thiam, H. Ly Diallo, Mor Ndiaye, Grégoire Sissoko,
Tópico(s)Thin-Film Transistor Technologies
ResumoIn this study, a method for determining the intrinsic recombination velocity at the junction of a silicon solar cell is presented. The expression of intrinsic recombination velocity at the junction was established under irradiation in frequency modulation. Based on this expression, an electrical model of the intrinsic recombination velocity at the junction is presented.
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