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1.5×10−9 Ωcm2 Contact resistivity on highly doped Si:P using Ge pre-amorphization and Ti silicidation

2015; Linguagem: Inglês

10.1109/iedm.2015.7409753

Hao Yu, Marc Schaekers, Erik Rosseel, A. Peter, J.-G. Lee, Wenya Song, S. Demuynck, T. Chiarella, J-A. Ragnarsson, Stefan Kubicek, J.-L. Everaert, Naoto Horiguchi, K. Barla, D. Kim, N. Collaert, Aaron Thean, K. De Meyer,

Silicon Nanostructures and Photoluminescence

Record-low contact resistivity (pc) for n-Si, down to 1.5×10−9 Q-cm2, is achieved on Si:P epitaxial layer. We confirm that Ti silicidation reduces the pc for n-Si, while an additional Ge pre-amorphization implantation (PAI) before Ti silicidation further extends the pc reduction. In situ doped Si:P with P concentration of 2×1021 cm−3 is used as the substrate, and dynamic surface anneal (DSA) boosts P activation. In addition, TiOx based metal-insulator-semiconductor (MIS) contact is also studied on Si:P but is found to suffer from low thermal stability.