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Enhanced pH sensitivity over the Nernst limit of electrolyte gated a-IGZO thin film transistor using branched polyethylenimine

2016; Royal Society of Chemistry; Volume: 6; Issue: 13 Linguagem: Inglês

10.1039/c5ra26409j

2046-2069

Narendra Kumar, Jitendra Kumar, Siddhartha Panda,

Semiconductor materials and devices

a-IGZO based EGTFT with 4.6-fold enhanced pH sensitivity of ∼110 mV pH −1 using thin film coating of branched polyethylenimine (BPEI).