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Electrically conducting n-type AlGaN/GaN distributed Bragg reflectors grown by metalorganic chemical vapor deposition

2016; Elsevier BV; Volume: 443; Linguagem: Inglês

10.1016/j.jcrysgro.2016.03.027

1873-5002

Yuh-Shiuan Liu, A. F. M. Saniul Haq, Tsung-Ting Kao, Karan Mehta, Shyh‐Chiang Shen, Theeradetch Detchprohm, P. Douglas Yoder, Russell D. Dupuis, Hongen Xie, F. A. Ponce,

Semiconductor materials and devices

We report an electrically conducting 40-pair silicon doped Al0.12Ga0.88N/GaN distributed Bragg reflector (DBR) grown by metalorganic chemical vapor deposition on a silicon doped n-type GaN template. Due to the relatively small lattice mismatch between AlGaN and GaN, strain managing layers are not required for crack-free n-DBR growth. The DBR demonstrates a peak reflectivity of 91.6% at 368 nm with stopband of 11 nm. In addition, the 40-pair n-DBR shows the vertical resistance of 5.5 Ω, which corresponds to bulk resistivity of 0.52 Ω cm, near the maximum measured current of 100 mA.