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Characteristics and Mechanism of Cu Films Fabricated at Room Temperature by Aerosol Deposition

2016; Springer Science+Business Media; Volume: 11; Issue: 1 Linguagem: Inglês

10.1186/s11671-016-1378-9

1931-7573

Dong‐Won Lee, Oh-Yun Kwon, Won-Ju Cho, Jun‐Kwang Song, Yong-Nam Kim,

Semiconductor materials and devices

We were successful in growing a dense Cu film on Al2O3 substrates at room temperature using an aerosol deposition (AD) method. The characteristics of Cu films were investigated through electrical resistivity and X-ray photoelectron spectroscopy (XPS). The resistivity of Cu films was low (9.2–12.5 μΩ cm), but it was five to seven times higher than that of bulk copper. The deterioration of the resistivity indicates that a Cu2O phase with CuO occurs due to a particle-to-particle collision. Moreover, the growth of Cu films was investigated by observing their microstructures. At the initial stage in the AD process, the impacted particles were flattened and deformed on a rough Al2O3 substrate. The continuous collision of impacted particles leads to the densification of deposited coating layers due to the plastic deformation of particles. The bonding between the Cu particles and the rough Al2O3 substrate was explained in terms of the adhesive properties on the surface roughness of Al2O3 substrates. It was revealed that the roughness of substrates was considerably associated with the mechanical interlocking between Cu particles and rough Al2O3 substrate.