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Study of Joining Interface between Si₃N₄ and Metal by Active Metal

1989; Ceramic Society of Japan; Volume: 97; Issue: 1131 Linguagem: Inglês

10.2109/jcersj.97.1354

1882-1022

Yushi Shichi, Masaharu ARITA, Kenji MATSUKIYO, Masaji MATSUNAGA,

Advanced ceramic materials synthesis

Surface analysis of the joining interface between silicon nitride (Si3N4) and metal with an active metal foil was carried out by XPS, SEM-EDX to make clear joining mechanism and action of brazing metals. The reaction product layer of the specimen which contained brazing metal was constituted two layers, and was about 5μm thick. Layer I facing Si3N4 was composed of titanium nitride (TiN), and layer II facing brazing metals was composed of TiN and titanium silicide (Ti5Si3). The reaction product layer of a specimen without brazing metal was about 0.4μm thick and composed of TiN, Ti5Si3 and elemental silicon (Si). On the basis of the data obtained by this analysis, it was considered that;(a) During the initial stage of joining, Si3N4 reacts with titanium at the interface to produce TiN and Si according to reaction (1).Si3N4+4Ti→4TiN+3Si (1)(b) At a system contained brazing metals, diffusion of Si into the inside was accelerated to react with non-reacted Ti and from Ti5Si3 according to reaction (2).3Si+5Ti→Ti5Si3 (2)(c) Action of brazing metals accelerates the diffusions of Si, TiN, Ti5Si3 and Ti, and products wide reaction layer.