p-BaSi2/n-Si heterojunction solar cells with conversion efficiency reaching 9.0%
2016; American Institute of Physics; Volume: 108; Issue: 15 Linguagem: Inglês
10.1063/1.4945725
ISSN1520-8842
AutoresDaichi Tsukahara, Suguru Yachi, Hiroki Takeuchi, Ryota Takabe, Weijie Du, Masakazu Baba, Yunpeng Li, Kaoru Toko, Noritaka Usami, Takashi Suemasu,
Tópico(s)Chalcogenide Semiconductor Thin Films
Resumop-BaSi2/n-Si heterojunction solar cells consisting of a 20 nm thick B-doped p-BaSi2 epitaxial layer (p = 2.2 × 1018 cm−3) on n-Si(111) (ρ = 1–4 Ω cm) were formed by molecular beam epitaxy. The separation of photogenerated minority carriers is promoted at the heterointerface in this structure. Under AM1.5 illumination, the conversion efficiency η reached 9.0%, which is the highest ever reported for solar cells with semiconducting silicides. An open-circuit voltage of 0.46 V, a short-circuit current density of 31.9 mA/cm2, and a fill factor of 0.60 were obtained. These results demonstrate the high potential of BaSi2 for solar cell applications.
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