Progress in Magnetoresistive Memory: Magnetic Tunnel Junctions with a Composite Free Layer
2014; Frontiers Media; Linguagem: Inglês
10.1142/9789814656917_0001
ISSN2673-5857
AutoresAlexander Makarov, Viktor Sverdlov, S. Selberherr,
Tópico(s)Advanced Memory and Neural Computing
ResumoSelected Topics in Electronics and SystemsFrontiers in Electronics, pp. 1-15 (2015) No AccessProgress in Magnetoresistive Memory: Magnetic Tunnel Junctions with a Composite Free LayerAlexander Makarov, Viktor Sverdlov, and Siegfried SelberherrAlexander MakarovInstitute for Microelectronics, TU Wien, Vienna, A-1040, Austria, Viktor SverdlovInstitute for Microelectronics, TU Wien, Vienna, A-1040, Austria, and Siegfried SelberherrInstitute for Microelectronics, TU Wien, Vienna, A-1040, Austriahttps://doi.org/10.1142/9789814656917_0001Cited by:0 PreviousNext AboutSectionsPDF/EPUB ToolsAdd to favoritesDownload CitationsTrack CitationsRecommend to Library ShareShare onFacebookTwitterLinked InRedditEmail Abstract: Magnetoresistive memory is a candidate for future universal memory because of fast switching, high density, and non-volatility. However, improvement regarding the essential parameters such as thermal stability and switching current is still needed and finding alternative architectures for magnetic cell structures is of considerable importance for the success of magnetoresistive memory. A structure with a composite free layer displays significant switching time reduction without sacrificing the thermal stability. In this work we discuss the progress in development of structures with a composite free layer from first suggestions to structurally optimized cells. We compare the most important parameters of a newly proposed optimized structure with a composite free layer, which are the switching time, the thermal stability, and the switching energy barrier, with a conventional structure with a monolithic free layer. Keywords: STT-MRAMmicromagnetic simulationcomposite free layer FiguresReferencesRelatedDetails Frontiers in ElectronicsMetrics History KeywordsSTT-MRAMmicromagnetic simulationcomposite free layerPDF download
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