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Monitoring Oxygen Movement by Raman Spectroscopy of Resistive Random Access Memory with a Graphene-Inserted Electrode

2013; American Chemical Society; Volume: 13; Issue: 2 Linguagem: Inglês

10.1021/nl304246d

1530-6992

He Tian, Hong-Yu Chen, Bin Gao, Shimeng Yu, Jiale Liang, Yi Yang, Dan Xie, Jinfeng Kang, Tian-Ling Ren, Yuegang Zhang, H.‐S. Philip Wong,

Electronic and Structural Properties of Oxides

In this paper, we employed Ramen spectroscopy to monitor oxygen movement at the electrode/oxide interface by inserting single-layer graphene (SLG). Raman area mapping and single-point measurements show noticeable changes in the D-band, G-band, and 2D-band signals of the SLG during consecutive electrical programming repeated for nine cycles. In addition, the inserted SLG enables the reduction of RESET current by 22 times and programming power consumption by 47 times. Collectively, our results show that monitoring the oxygen movement by Raman spectroscopy for a resistive random access memory (RRAM) is made possible by inserting a single-layer graphene at electrode/oxide interface. This may open up an important analysis tool for investigation of switching mechanism of RRAM.